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triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 1 2 - 20 ghz low noise amplifier TGA8310-SCC key features and performance description the triquint TGA8310-SCC is a monolithic low noise distributed amplifier, which operates from 2 to 20 ghz. typical noise figure is 4 db. nine 122 um gatewidth fets typically provide 17.5 dbm of output power at 1 db gain compression and 9 db typical small signal gain. typical input return loss is 17 db from 2 to 20 ghz. typical output return loss is 20 db. ground is provided to the circuitry through vias to the backside metallization the TGA8310-SCC low noise distributed amplifier is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. the TGA8310-SCC is supplied in chip form and is assembled using automated equipment. ? 2 to 20- ghz frequency range ? 3.5 db noise figure midband ? 1.4:1 typical input/output swr ? 17.5 dbm output power at 1 db gain compression ? 9 db typical gain ? 4.1 x 2.4 x 0.1 mm (0.162 x 0.093 x 0.004 in.)
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 2 table i maximum ratings 6/ symbol parameter value notes v d positive drain supply voltage 9 v v + positive supply voltage 12 v 1/, 5 / v g1 negative supply voltage range -5 v to 0 v 1/ v ctrl gain control voltage range -5 v to 4 v 2/ i d positive drain current i dss 5/, 7 / i + positive supply current 188 ma 5/, 7 / i - negative gate current 8.73 ma 7/ p d power dissipation at or below 25 c base plate temperature 2.6 w 5/, 8/ p in input continuous wave power 25.5 dbm t ch operating channel temperature 150 0 c 3/ 4 /, 8 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ 0v (v + - v g1 ) 13v 2/ 0v (v + - v g2 ) 13v 3/ these ratings apply to each individual fet 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 6/ these ratings represent the maximum operable values for this device. 7/ total current for all stages 8/ for operation above 25 c base-plate temperature, derate linearly at the rate of 5.5 mw/ c table ii dc probe tests (100%) (t a = 25 c + 5 c) notes symbol test conditions 3/ limits units min max 4/ i dss std 97 292 ma 4/ g m std 130 281 ms 1/,2 /,4 / |v p1 |std0.5 2.1 v 1/,2 /,4 / |v p2 |std0.5 2.1 v 1/,4 / |v bvgd |std 630v 1/,4 / |v bvgs |std 630v 4/ res std 42.7 79.3 w 4/ res std 36.4 67.6 w 4/ res std 173.0 321.0 w 4/ res std 31.8 59.1 w 1/ v p , v bvgd , and v bvgs are negative 2/ subscripts are referred to q1, q2 accordingly. 3/ the measurement conditions are subject to change at the manufactures discretion (with appropriate notification to the buyer). 4/ std refers to standard test conditions (see table iii for definitions) TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 3 TGA8310-SCC table iii autoprobe fet parameter measurement conditions fet parameters test conditions i dss : maximum drain current (i ds ) with gate voltage (v gs ) at zero volts. v gs = 0.0 v, drain voltage (v ds ) is swept from 0.5 v up to a maximum of 3.5 v in search of the maximum value of i ds ; voltage for i dss is recorded as vdsp. g m : transconductance; i dss - ids 1 () vg1 for all material types, v ds is swept between 0.5 v and vdsp in search of the maximum value of i ds . this maximum i ds is recorded as ids1. for intermediate and power material, ids1 is measured at v gs = vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i ds to 0.5 ma/mm. v bvgd : breakdown voltage, gate-to-drain; gate-to- drain breakdown current (i bd ) = 1.0 ma/mm of gate width. drain fixed at ground, source not connected (floating), 1.0 ma/mm forced into gate, gate-to-drain voltage (v gd ) measured is v bdgd and recorded as bvgd; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source. v bvgs : breakdown voltage, gate-to-source; gate-to- source breakdown current (i bs ) = 1.0 ma/mm of gate width. source fixed at ground, drain not connected (floating), 1.0 ma/mm forced into gate, gate-to- source voltage (v gs ) measured is v bdgs and recorded as bvgs; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source.
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 4 TGA8310-SCC table iv rf wafer screening tests (t a = 25 c + 5 c) value notes parameters part dash no affected measurement conditions (v d = 5v, v g2 = 1.5v, i + = 60ma, v g1 = adjust) min typ max units 1/ small-signal gain magnitude -2,-3 f = 2 C 20 ghz 8.0 db f = 2 C 15 ghz 5.2 1/ noise figure -2,-3 f = >15 C 18 ghz 6.2 db f = 2 C 10 ghz 14 1/ output power at 1 db gain compression -2,-3 f = 10 C 18 ghz 13 dbm f = 2.0 C 2.5 ghz 8 1/ input return loss magnitude -2,-3 f = 2.5 C 20 ghz 9 db f = 2 - 18 ghz 9.5 1/ output return loss magnitude -2,-3 f = 18 C 20 ghz 8.0 db f = 2 ghz 29.5 f = 6 ghz 27.0 f = 9 ghz 27.5 f = 12 ghz 26.5 output third- order intercept point f = 18 ghz 27.0 dbm f o = 2 ghz 32.5 f o = 4 ghz 29.5 f o = 6 ghz 29.0 output second- order intercept point f o = 9 ghz 28.0 dbm f o = 2 ghz -29.0 f o = 4 ghz -24.5 output third harmonic at 1-db gain compression f o = 6 ghz -19.5 dbc* f o = 2 ghz -18.0 f o = 4 ghz -15.0 f o = 6 ghz -13.5 output second harmonic at 1-db gain compression f o = 9 ghz -15.5 dbc* 1/ these parameters are to be tested for wafer acceptance. devices shall be selected from each wafer and supplied to the product/test engineer in accordance with 4.2. wafer acceptance shall be based upon the results of this test. * unit dbc applies to decibels with respect to the carrier or fundamental frequency, f o .
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 5 table v thermal information TGA8310-SCC parameter test conditions nom unit r qjc thermal resistance (channel to backside) v ctrl = 1.5 v, v + = 8 v 12 c/w i + = 60 ma v d = 5 v 20
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 6 v ctrl = 1.5 v i + = 60 ma t a = 25c v d = 5 v v + = 8 v 14 12 10 8 6 4 0 2 2 4 6 8 10 12 14 16 18 20 g a i n ( d b ) frequency (ghz) typical small signal power gain v ctrl = 1.5 v i + = 60 ma t a = 25c v d = 5 v v + = 8 v frequency (ghz) 2 4 6 8 10 12 14 16 18 n o i s e f i g u r e ( d b ) 8 6 4 0 2 3 5 7 1 typical noise figure typical output power p1db 2 4 6 8 10 12 14 16 18 20 frequency (ghz) o u t p u t p o w e r ( d b m ) 22 16 10 14 18 20 12 v ctrl = 1.5 v i + = 60 ma t a = 25c v d = 5 v v + = 8 v TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 7 v d = 5 v v + = 8 v typical input return loss v ctrl = 1.5 v i + = 60 ma t a = 25c i n p u t r e t u r n l o s s ( d b ) 2 5 8 11 14 17 20 0 12 18 36 24 6 30 frequency (ghz) typical output return loss v ctrl = 1.5 v i + = 60 ma t a = 25c v d = 5 v v + = 8 v o u t p u t r e t u r n l o s s ( d b ) frequency (ghz) 0 12 18 36 24 6 30 42 2 5 8 11 14 17 20 TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 8 f requenc y s 11 s 21 s 12 s 22 gain (ghz) mag ang() mag ang() mag ang() mag ang() (db) 2.0 0.28 -155 2.76 108 0.007 37 0.12 -133 8.8 2.5 0.23 -178 2.75 90 0.008 19 0.08 -152 8.8 3.0 0.20 165 2.74 72 0.010 4 0.05 180 8.8 3.5 0.17 151 2.77 53 0.011 -12 0.04 134 8.8 4.0 0.14 140 2.79 35 0.012 -28 0.04 86 8.9 4.5 0.11 133 2.83 16 0.013 -45 0.05 55 9.0 5.0 0.08 132 2.84 -3 0.015 -63 0.05 32 9.1 5.5 0.06 138 2.87 -22 0.016 -80 0.04 8 9.2 6.0 0.06 154 2.88 -41 0.018 -99 0.03 -28 9.2 6.5 0.06 166 2.90 -60 0.019 -117 0.03 -82 9.2 7.0 0.08 165 2.88 -79 0.021 -136 0.04 -128 9.2 7.5 0.09 165 2.91 -98 0.022 -152 0.05 -157 9.3 8.0 0.12 160 2.88 -118 0.024 -171 0.06 173 9.2 8.5 0.13 154 2.87 -137 0.026 172 0.05 143 9.2 9.0 0.15 148 2.84 -157 0.027 156 0.05 111 9.1 9.5 0.15 141 2.81 -176 0.028 140 0.06 79 9.0 10.0 0.14 131 2.78 165 0.029 124 0.07 52 8.9 10.5 0.13 122 2.76 146 0.030 104 0.06 27 8.8 11.0 0.11 112 2.78 128 0.031 91 0.07 1 8.9 11.5 0.08 105 2.79 108 0.032 73 0.06 -29 8.9 12.0 0.06 105 2.76 88 0.032 55 0.06 -58 8.8 12.5 0.04 115 2.77 69 0.033 38 0.05 -85 8.9 13.0 0.03 147 2.76 49 0.034 20 0.05 -113 8.8 13.5 0.05 163 2.76 29 0.035 1 0.04 -147 8.8 14.0 0.06 161 2.75 8 0.037 -19 0.02 -173 8.8 14.5 0.08 150 2.74 -12 0.039 -39 0.01 163 8.7 15.0 0.10 133 2.72 -33 0.040 -59 0.01 -17 8.7 15.5 0.10 116 2.71 -54 0.042 -78 0.03 -37 8.7 16.0 0.09 103 2.60 -76 0.043 -96 0.06 -60 8.3 16.5 0.09 90 2.54 -96 0.046 -112 0.07 -76 8.1 17.0 0.08 65 2.52 -117 0.048 -131 0.09 -91 8.0 17.5 0.06 45 2.49 -139 0.050 -151 0.11 -112 7.9 18.0 0.06 81 2.39 -158 0.047 -170 0.13 -129 7.6 18.5 0.09 63 2.50 -179 0.051 177 0.12 -138 8.0 19.0 0.10 72 2.45 158 0.054 155 0.12 -135 7.8 19.5 0.13 85 2.34 133 0.053 132 0.15 -120 7.4 20.0 0.15 96 2.20 110 0.053 112 0.21 -118 6.8 t a = 25c, v d = 8 v, v ctrl = 1.5 v, i + = 60 ma reference planes for s-parameter data include bond wires as specified in the recommended assembly diagram. typical s-parameters TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 9 f re que nc y s 11 s 21 s 12 s 22 gain (ghz) mag ang() mag ang() mag ang() mag ang() (db) 2.0 0.31 -154 3.32 119 0.009 61 0.22 -19 10.4 2.5 0.26 -175 3.23 96 0.010 32 0.19 -62 10.2 3.0 0.21 169 3.13 75 0.011 14 0.17 -98 9.9 3.5 0.18 155 3.06 54 0.012 -6 0.16 -132 9.7 4.0 0.15 145 3.00 35 0.013 -23 0.14 -162 9.6 4.5 0.12 137 2.97 16 0.014 -42 0.12 169 9.4 5.0 0.10 134 2.93 -3 0.014 -59 0.10 143 9.3 5.5 0.08 135 2.93 -22 0.016 -76 0.07 116 9.3 6.0 0.07 143 2.92 -41 0.018 -96 0.04 87 9.3 6.5 0.07 153 2.93 -60 0.019 -115 0.02 44 9.3 7.0 0.08 162 2.94 -79 0.021 -133 0.02 -92 9.4 7.5 0.10 162 2.95 -99 0.022 -153 0.04 -143 9.4 8.0 0.12 157 2.91 -118 0.024 -170 0.05 -170 9.3 8.5 0.13 152 2.90 -138 0.025 173 0.05 164 9.2 9.0 0.14 145 2.85 -157 0.027 156 0.05 133 9.1 9.5 0.14 137 2.83 -176 0.028 140 0.05 95 9.1 10.0 0.14 127 2.80 165 0.029 123 0.05 52 8.9 10.5 0.14 116 2.77 146 0.029 109 0.06 17 8.8 11.0 0.12 109 2.80 127 0.032 89 0.07 -25 8.9 11.5 0.11 100 2.80 107 0.032 73 0.08 -54 9.0 12.0 0.08 99 2.80 88 0.033 56 0.08 -82 8.9 12.5 0.07 107 2.80 68 0.035 37 0.07 -109 8.9 13.0 0.06 128 2.79 48 0.035 18 0.05 -141 8.9 13.5 0.07 147 2.79 28 0.037 0 0.03 153 8.9 14.0 0.09 150 2.77 8 0.038 -21 0.04 53 8.8 14.5 0.11 144 2.74 -13 0.039 -41 0.08 13 8.7 15.0 0.12 130 2.73 -33 0.041 -58 0.12 -14 8.7 15.5 0.12 121 2.70 -54 0.044 -76 0.16 -42 8.6 16.0 0.13 112 2.65 -74 0.046 -96 0.18 -70 8.5 16.5 0.14 99 2.66 -94 0.049 -115 0.18 -99 8.5 17.0 0.12 87 2.70 -115 0.052 -134 0.16 -131 8.6 17.5 0.09 81 2.71 -138 0.056 -155 0.13 -166 8.7 18.0 0.08 95 2.61 -159 0.053 -175 0.08 145 8.3 18.5 0.07 79 2.68 -180 0.056 168 0.13 57 8.6 19.0 0.04 88 2.67 156 0.058 142 0.24 -25 8.5 19.5 0.04 92 2.65 133 0.054 119 0.37 -87 8.5 20.0 0.03 86 2.64 110 0.051 102 0.34 -149 8.4 typical s-parameters t a = 25c, v d = 5 v, v ctrl = 1.5 v, i + = 60 ma reference planes for s-parameter data include bond wires as specified in the recommended assembly diagram. TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 10 equivalent schematic TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 11 mechanical characteristics gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 12 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. chip assembly and bonding diagrams TGA8310-SCC recommended assembly diagram, 8 volt bias
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 13 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram, 5 volt bias TGA8310-SCC
triquint semiconductor texas phone : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet june 12, 2002 14 chip assembly and process notes TGA8310-SCC reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c.

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